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SRAM
Austin Semiconductor, Inc. 128K x 8 SRAM
WITH DUAL CHIP ENABLE
AVAILABLE AS MILITARY SPECIFICATIONS
*SMD 5962-89598 *MIL-STD-883
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
MT5C1008
PIN ASSIGNMENT (Top View)
32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS
32-Pin LCC (EC) 32-Pin SOJ (DCJ)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
FEATURES
* * * * * * High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1\, CE2, and OE\ options. * All inputs and outputs are TTL compatible
32-Pin LCC (ECA)
4 3 2 1 32 31 30
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4
OPTIONS
* Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s)* Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ * 2V data retention/low power
MARKING
-12 (contact factory) -15 -20 -25 -35 -45 -55* -70*
A7 A6 A5 A4 A3 A2 A1 A0 DQ1
5 6 7 8 9 10 11 12 13
A12 A14 A10 6 NC VCC A15 CE2
32-Pin Flat Pack (F)
29 28 27 26 25 24 23 22 21
WE \ A13 A8 A9 A11 OE \ A10 CE1\ DQ8
14 15 16 17 18 19 20
DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1\, CE2) and output enable (OE\). These control pins can place the outputs in High-Z for additional flexibility in system design. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power requirements. The "L" version offers a 2V data retention mode, reducing current consumption to 1mA maximum.
C CW EC ECA F DCJ SOJ L
No. 111 No. 112 No. 207 No. 208 No. 303 No. 501 No. 507
*Electrical characteristics identical to those provided for the 45ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC GND
MT5C1008
A A A A A A A A A
ROW DECODER
DQ8
I/O CONTROL
1,048,576-BIT MEMORY ARRAY
DQ1
(LSB) CE1\ CE2 COLUMN DECODER (LSB) OE\ WE\ POWER DOWN
AAAAAAAA
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
MODE STANDBY STANDBY READ READ WRITE OE\ X X L H X CE1\ H X L L L CE2 X L H H H WE\ X X H H L DQ HIGH-Z HIGH-Z Q HIGH-Z D POWER STANDBY STANDBY ACTIVE ACTIVE ACTIVE
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Supply Voltage Range (Vcc)...............................-.5V to +6.0V Storage Temperature ....................................-65C to +150C Short Circuit Output Current (per I/O)..........................20mA Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V Max Junction Temperature**.......................................+150C Power Dissipation .....................................................................1 W
MT5C1008
*Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods will affect reliability. Refer to page 17 of this datasheet for a technical note on this subject. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%) DESCRIPTION CONDITIONS
SYM VIH VIL
MIN 2.2 -0.5 -10 -10 2.4
MAX VCC+0.5 0.8 10 10
UNITS V V A A V
NOTES 1 1, 2
Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage 0VILI ILO VOH VOL
1 1
0.4
MAX -20 -25 150 140
V
PARAMETER
CONDITIONS
SYM
-12 250
-15 180
-35 135
-45 125
UNITS NOTES mA 3
Power Supply Current: Operating
CE\ < VIL; OE\, WE\, and CE2>VIH ICCSP VCC = MAX, f = MAX = 1/tRC (MIN) Output Open *L version only ICCLP * CE\=VIH, CE2=VIL; Other Inputs at VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX VIL < VSS -0.2V VIH > VCC -0.2V; F = 0 Hz ISBT
250
180
140
130
125
115
mA
Power Supply Current: Standby
25
25
25
25
25
25
mA
ISBC
10
10
10
10
10
10
mA
CAPACITANCE
DESCRIPTION Input Capacitance (A0-A16) Output Capacitance Input Capacitance (CE\, WE\, OE\)
MT5C1008 Rev. 6.5 7/02
CONDITIONS TA = 25 C, f = 1MHz VCC = 5V
o
SYM CI CO CI
MAX 12 14 20
UNITS pF pF pF
NOTES 4 4 4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C1008
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -12 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 12 12 12 3 3 7 7 0 7 12 11 11 0 0 11 8 0 5 7 15 12 12 0 0 12 8 0 5 7 0 7 20 15 15 0 0 15 10 0 5 9 3 3 7 7 0 8 25 20 20 0 0 20 15 0 5 10 15 15 15 3 3 8 7 0 10 35 25 25 0 0 25 20 0 5 15 20 20 20 3 3 10 10 0 15 45 35 35 0 5 35 20 0 5 20 25 25 25 3 3 15 15 0 20 35 35 35 3 3 20 20 45 45 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7
4, 6, 7 4, 6, 7
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
+5V AC TEST CONDITIONS
Input pulse levels ................................... Vss to 3.0V Input rise and fall times ....................................... 5ns Input timing reference levels ............................. 1.5V Output reference levels ..................................... 1.5V Output load .............................. See Figures 1 and 2
MT5C1008
+5V 480 480 Q 255 5 pF
Q 255 30
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1. 2. 3. All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, allowing for actual tester RC time constant.
7.
8. 9. 10. 11. 12. 13.
4. 5. 6.
At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE and tHZOE is less than tLZOE. WE\ is HIGH for READ cycle. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. CE2 timing is the same as CE1\ timing. The waveform is inverted. Chip enable (CE1\, CE2) and write enable (WE\) can initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V, f=0 VCC = 2V ICCDR 1.0 mA CONDITIONS SYMBOL VDR MIN 2 MAX --UNITS NOTES V
tCDR tR
0 tRC
---
ns ns
4 4, 11
LOW Vcc DATA RETENTION WAVEFORM
VCC
t
DATA RETENTION MODE 4.5V CDR VDR VDR > 2V 4.5V
t
R
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
432 4321 4321 1 4321
CE2
VIH VIL
321 321 21 321 3
CE1\
VIH VIL
4326 3216 87 4326 321154321 87 432154321 321154321 87 321154321 4326 87 4326 3216 87 4326 321154321 87 432154321 321154321 87 321154321 4326 87
987654321 4321 321 987654321 4321 321 987654321 987654321 987654321 4321 321 987654321 987654321 987654321 4321 321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
MT5C1008
READ CYCLE NO. 1 8, 9
tRC ADDRESS tAA tOH DQ
PREVIOUS DATA VALID DATA VALID VALID
READ CYCLE NO. 2 7, 8, 10, 12
tRC CE\ tAOE tHZOE tLZOE OE\ tLZCE tACE DQ tPU tPD Icc
DATA VALID
tHZCE
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13 (Chip Enabled Controlled)
tWC ADDRESS tAW tAH tAS CE\ tWP1 WE\ tDS D Q HIGH Z
DATA VAILD
MT5C1008
tCW
tDH
WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled)
tWC ADDRESS tAW tAH tCW CE\ tAS tWP1 WE\ tDH D Q
HIGH-Z
DATA VALID
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C) SMD 5962-89598, Case Outline Z
MT5C1008
S1
D
S2 A Q Pin 1 b b1 E L1 L
S
e
NOTE
0o to 15o
c E1
SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2 NOTE:
SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.023 0.038 0.065 0.008 0.015 --1.700 0.350 0.405 0.390 0.420 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 --0.100 0.005 --0.005 --Either configuration in detail A is allowed on SMD.
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW) SMD 5962-89598, Case Outline X
MT5C1008
D A
L L1
b Pin 1 e b1
E
b2 E1
SYMBOL A b b1 b2 D E E1 e L L1
SMD SPECIFICATIONS MIN MAX 0.089 0.111 0.016 0.020 0.045 0.055 0.009 0.011 1.585 1.615 0.585 0.605 0.595 0.610 0.090 0.110 0.040 0.060 0.125 0.175
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC) SMD 5962-89598, Case Outline U
See Detail A
MT5C1008
A
L1
D
L e
b
h x 45o
E
Detail A
L2 b1 b2
SYMBOL A b b1 b2 D E e h L L1 L2
SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.022 0.028 0.006 0.022 0.040 --0.800 0.840 0.392 0.408 0.050 BSC 0.012 REF 0.070 0.080 0.090 0.110 0.003 0.015
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA) SMD 5962-89598, Case Outline M
MT5C1008
D1
A L1
e E E1 See Detail A
D
L
Detail A
b1
b
b2
SYMBOL A b b1 b2 D D1 E E1 e L L1
SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.022 0.028 0.004 0.014 0.040 --0.442 0.458 0.300 BSC 0.540 0.560 0.400 BSC 0.050 BSC 0.045 0.055 0.075 0.095
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F) SMD 5962-89598, Case Outline T
L E
MT5C1008
Pin 1 Index e 32 1
b
D
17
16
S1 E1
S
Bottom View
Top View
c Q E2 E3 A
SYMBOL A b c D E E1 E2 E3 e L Q S S1
SMD SPECIFICATIONS MIN MAX 0.097 0.125 0.015 0.019 0.003 0.009 --0.830 0.400 0.420 --0.450 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 --0.045 0.000 ---
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ) SMD 5962-89598, Case Outline 7
A
MT5C1008
e
D D1
B1 b
E2 E1
E A2
SYMBOL A A2 B1 b D D1 E E1 E2 e
SMD SPECIFICATIONS MIN MAX 0.132 0.144 0.026 0.036 0.030 0.040 0.015 0.019 0.812 0.828 0.740 0.760 0.405 0.415 0.435 0.445 0.360 0.380 0.050 BSC
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS*
ASI Case #507 (Package Designator SOJ) SMD 5962-89598, Case Outline Y
j
32 1
MT5C1008
See Detail A
A1
D1 B2
b
D
e
17
S A
16 E E1
SYMBOL A A1 A2 B B1 B2 B3 b D D1 E E1 E2 e e1 e2 j S S1
*All measurements are in inches.
MT5C1008 Rev. 6.5 7/02
SMD SPECIFICATIONS MIN MAX 0.120 0.165 0.088 0.120 0.070 REF 0.010 REF 0.030R TYP 0.020 REF 0.025 0.045 0.015 0.019 0.816 0.838 0.750 REF 0.419 0.431 0.430 0.445 0.360 0.380 0.050 BSC 0.038 TYP 0.005 --0.005 TYP 0.030 0.040 0.020 TYP
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
5432109876543210987654321 5432109876543210987654321 5432109876543210987654321 5432109876543210987654321 5432109876543210987654321 5432109876543210987654321
B B1 E2
e2 e1
Base Plane B3 Seating Plane A2
Detail A
32121 1 3 32121 32321 3
S1
SRAM
Austin Semiconductor, Inc. ORDERING INFORMATION
EXAMPLE: MT5C1008CW-45/883C Device Package Speed Options** Process Number Type ns MT5C1008 C -12 L /* MT5C1008 CW -12 L /* MT5C1008 C -15 L /* MT5C1008 CW -15 L /* MT5C1008 C -20 L /* MT5C1008 CW -20 L /* MT5C1008 C -25 L /* MT5C1008 CW -25 L /* MT5C1008 C -35 L /* MT5C1008 CW -35 L /* MT5C1008 C -45 L /* MT5C1008 CW -45 L /* MT5C1008 C -55 L /* MT5C1008 CW -55 L /* MT5C1008 C -70 L /* MT5C1008 CW -70 L /* EXAMPLE: MT5C1008F-25L/883C Device Package Speed Options** Process ns Number Type MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 MT5C1008 F F F F F F F F -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /* EXAMPLE: MT5C1008ECA-25L/XT Device Package Speed Options** Process Number Type ns MT5C1008 EC -12 L /* MT5C1008 ECA -12 L /* MT5C1008 EC -15 L /* MT5C1008 ECA -15 L /* MT5C1008 EC -20 L /* MT5C1008 ECA -20 L /* MT5C1008 EC -25 L /* MT5C1008 ECA -25 L /* MT5C1008 EC -35 L /* MT5C1008 ECA -35 L /* MT5C1008 EC -45 L /* MT5C1008 ECA -45 L /* MT5C1008 EC -55 L /* MT5C1008 ECA -55 L /* MT5C1008 EC -70 L /* MT5C1008 ECA -70 L /* EXAMPLE: MT5C1008DCJ-35/IT Device Package Speed Options** Process Number Type ns DCJ -12 L /* MT5C1008 MT5C1008 SOJ -12 L /* MT5C1008 DCJ -15 L /* MT5C1008 SOJ -15 L /* MT5C1008 DCJ -20 L /* MT5C1008 SOJ -20 L /* MT5C1008 DCJ -25 L /* MT5C1008 SOJ -25 L /* MT5C1008 DCJ -35 L /* MT5C1008 SOJ -35 L /* MT5C1008 DCJ -45 L /* MT5C1008 SOJ -45 L /* MT5C1008 DCJ -55 L /* MT5C1008 SOJ -55 L /* MT5C1008 DCJ -70 L /* MT5C1008 SOJ -70 L /*
MT5C1008
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power
MT5C1008 Rev. 6.5 7/02
-40oC to +85oC -55oC to +125oC -55oC to +125oC
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
SRAM
Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE
ASI Package Designator C & CW
ASI Part #
MT5C1008C-20/883C MT5C1008C-20L/883C MT5C1008C-25/883C MT5C1008C-25L/883C MT5C1008C-35/883C MT5C1008C-35L/883C MT5C1008C-45/883C MT5C1008C-45L/883C MT5C1008C-55/883C MT5C1008C-55L/883C MT5C1008C-70/883C MT5C1008C-70L/883C MT5C1008CW-20/883C MT5C1008CW-20L/883C MT5C1008CW-25/883C MT5C1008CW-25L/883C MT5C1008CW-35/883C MT5C1008CW-35L/883C MT5C1008CW-45/883C MT5C1008CW-45L/883C MT5C1008CW-55/883C MT5C1008CW-55L/883C MT5C1008CW-70/883C MT5C1008CW-70L/883C
MT5C1008
ASI Package Designator EC & ECA
ASI Part #
MT5C1008EC-20/883C MT5C1008EC-20L/883C MT5C1008EC-25/883C MT5C1008EC-25L/883C MT5C1008EC-35/883C MT5C1008EC-35L/883C MT5C1008EC-45/883C MT5C1008EC-45L/883C MT5C1008EC-55/883C MT5C1008EC-55L/883C MT5C1008EC-70/883C MT5C1008EC-70L/883C MT5C1008ECA-20/883C MT5C1008ECA-20L/883C MT5C1008ECA-25/883C MT5C1008ECA-25L/883C MT5C1008ECA-35/883C MT5C1008ECA-35L/883C MT5C1008ECA-45/883C MT5C1008ECA-45L/883C MT5C1008ECA-55/883C MT5C1008ECA-55L/883C MT5C1008ECA-70/883C MT5C1008ECA-70L/883C
SMD Part #
5962-8959838MZA 5962-8959821MZA 5962-8959837MZA 5962-8959820MZA 5962-8959836MZA 5962-8959819MZA 5962-8959835MZA 5962-8959818MZA 5962-8959834MZA 5962-8959817MZA 5962-8959833MZA 5962-8959816MZA 5962-8959838MXA 5962-8959821MXA 5962-8959837MXA 5962-8959820MXA 5962-8959836MXA 5962-8959819MXA 5962-8959835MXA 5962-8959818MXA 5962-8959834MXA 5962-8959817MXA 5962-8959833MXA 5962-8959816MXA
SMD Part #
5962-8959838MUA 5962-8959821MUA 5962-8959837MUA 5962-8959820MUA 5962-8959836MUA 5962-8959819MUA 5962-8959835MUA 5962-8959818MUA 5962-8959834MUA 5962-8959817MUA 5962-8959833MUA 5962-8959816MUA 5962-8959838MMA 5962-8959821MMA 5962-8959837MMA 5962-8959820MMA 5962-8959836MMA 5962-8959819MMA 5962-8959835MMA 5962-8959818MMA 5962-8959834MMA 5962-8959817MMA 5962-8959833MMA 5962-8959816MMA
ASI Package Designator F
ASI Part #
MT5C1008F-20/883C MT5C1008F-20L/883C MT5C1008F-25/883C MT5C1008F-25L/883C MT5C1008F-35/883C MT5C1008F-35L/883C MT5C1008F-45/883C MT5C1008F-45L/883C MT5C1008F-55/883C MT5C1008F-55L/883C MT5C1008F-70/883C MT5C1008F-70L/883C
ASI Package Designator DCJ & SOJ
ASI Part #
MT5C1008DCJ-20/883C MT5C1008DCJ-20L/883C MT5C1008DCJ-25/883C MT5C1008DCJ-25L/883C MT5C1008DCJ-35/883C MT5C1008DCJ-35L/883C MT5C1008DCJ-45/883C MT5C1008DCJ-45L/883C MT5C1008DCJ-55/883C MT5C1008DCJ-55L/883C MT5C1008DCJ-70/883C MT5C1008DCJ-70L/883C MT5C1008SOJ-20/883C MT5C1008SOJ-20L/883C MT5C1008SOJ-25/883C MT5C1008SOJ-25L/883C MT5C1008SOJ-35/883C MT5C1008SOJ-35L/883C MT5C1008SOJ-45/883C MT5C1008SOJ-45L/883C MT5C1008SOJ-55/883C MT5C1008SOJ-55L/883C MT5C1008SOJ-70/883C MT5C1008SOJ-70L/883C
SMD Part #
5962-8959838MTA 5962-8959821MTA 5962-8959837MTA 5962-8959820MTA 5962-8959836MTA 5962-8959819MTA 5962-8959835MTA 5962-8959818MTA 5962-8959834MTA 5962-8959817MTA 5962-8959833MTA 5962-8959816MTA
SMD Part #
5962-8959838M7A 5962-8959821M7A 5962-8959837M7A 5962-8959820M7A 5962-8959836M7A 5962-8959819M7A 5962-8959835M7A 5962-8959818M7A 5962-8959834M7A 5962-8959817M7A 5962-8959833M7A 5962-8959816M7A 5962-8959838MYA 5962-8959821MYA 5962-8959837MYA 5962-8959820MYA 5962-8959836MYA 5962-8959819MYA 5962-8959835MYA 5962-8959818MYA 5962-8959834MYA 5962-8959817MYA 5962-8959833MYA 5962-8959816MYA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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SRAM
Austin Semiconductor, Inc.
DATE: 2/6/01
MT5C1008
Technical Note:
128Kx8 SRAM - Maximum Recommended Supply Voltage and Ambient Temperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device Types: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp., that operation at high Vcc's of 6 volts and beyond may result in a latch-up condition. This can cause permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125C.
MT5C1008 Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17

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